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A Sub-6GHz Wideband LNA with High Gain and Low NF in 110-nm SOI CMOS
  • Xiaowei Wang,
  • Zhiqun Li,
  • Tong Xu
Xiaowei Wang
Southeast University
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Zhiqun Li
Southeast University

Corresponding Author:[email protected]

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Tong Xu
Southeast University
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This letter presents a sub-6 GHz wideband low noise amplifier (LNA) based on double L-type load network and negative feedback technique. Using the cascode structure combined with the above techniques, a single-stage wideband LNA with high gain and low noise figure (NF) can be realized. Fabricated in 110-nm SOI CMOS technology, the proposed LNA achieves a maximum power gain of 15.2 dB, noise figure (NF) of 1.0–1.56 dB. The 3-dB bandwidth ranges from 3.05–4.55 GHz. The minimum power input at 1dB compression point (IP1dB) is -17.1 dBm. The LNA core area is 0.18 mm2 and dissipates a total power of 11.5 mW from 1.4 V power supply.
31 Jul 2023Submitted to Electronics Letters
01 Aug 2023Submission Checks Completed
01 Aug 2023Assigned to Editor
04 Aug 2023Reviewer(s) Assigned
13 Aug 2023Review(s) Completed, Editorial Evaluation Pending
16 Aug 2023Editorial Decision: Revise Minor
24 Aug 20231st Revision Received
24 Aug 2023Submission Checks Completed
24 Aug 2023Assigned to Editor
24 Aug 2023Review(s) Completed, Editorial Evaluation Pending
26 Aug 2023Editorial Decision: Accept