Thanks to the excellent passivation, high conductivity, low parasitic absorption and simple process, the wide-bandgap doping-free carrier selective contacts have been attracting much attention. In this work, the wide-bandgap high work function of Al 2O 3/MoO x stacks were prepared using the low-temperature atomic layer deposition and thermal evaporation technique, respectively, and the interfacial evolution and the elements distribution were examined using high-resolution transmission electron microscopy coupled with energy-dispersive spectroscopy. The passivation and conductivity of the Al 2O 3/MoO x stacks were systematical investigated by varying their thicknesses. The high effective minority carriers lifetime of 513 μs and the low series resistance of 0.24 mΩ are realized on the 7nm-Al 2O 3/5nm-MoO x and 7nm-Al 2O 3/3nm-MoO x stacks, respectively. Benefiting from the excellent surface passivation and conductivity, the industrial size (182×185.3 mm 2) n-TOPCon solar cell with a total area front 7nm-Al 2O 3/3nm-MoO x stacks demonstrates a champion power conversion efficiency (PCE) of 24.48%, as well as a short-circuit current density of 41.06 mA cm −2, an open-circuit voltage of 721 mV, and a fill factor of 82.66%. This work provides an effective way to enable the PCE over 26.0% and lower the process temperature for TOPCon solar cells with doping-free carrier selective contacts.

In recent years, developing dopant-free carrier-selective contacts, instead of heavily doped Si layer (either externally or internally), for crystalline silicon (c-Si) solar cells have attracted considerable interests with the aims to reduce parasitic light absorption and fabrication cost. However, the stability still remains a big challenge for dopant-free contacts, especially when thermal treatment is involved, which limits their industrial adoption. In this study, a perovskite material ZnTiO 3 combining with an ultrathin (~1 nm) SiO 2 film and Al layer is used as an electron-selective contact, forming an isotype heterojunction with n-type c-Si. The perovskite/c-Si heterojunction solar cells exhibit a performance-enhanced effect by post-metallization annealing when the annealing temperature is 200-350 °C. Thanks to the post-annealing treatment, an impressive efficiency of 22.0% has been demonstrated, which is 3.5% in absolute value higher than that of the as-fabricated solar cell. A detailed material and device characterization reveal that post annealing leads to the diffusion of Al into ZnTiO 3 film, thus doping the film and reducing its work function. Besides, the coverage of SiO 2 is also improved. Both these two factors contribute to the enhanced passivation effect and electron selectivity of the ZnTiO 3-based contact, and hence improve the cell performance.