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Epitaxial silicon transition zone measurements by spreading resistance profiling (SRP) and Fourier transform infrared (FTIR) reflectometry
  • +2
  • Peter Basa,
  • Eszter Najbauer,
  • Lucza Sinkó,
  • Szilvia Biró,
  • Zsolt Durkó
Peter Basa
Semilab Semiconductor Physics Laboratory Co Ltd

Corresponding Author:[email protected]

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Eszter Najbauer
Semilab Semiconductor Physics Laboratory Co Ltd
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Lucza Sinkó
Semilab Semiconductor Physics Laboratory Co Ltd
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Szilvia Biró
Semilab Semiconductor Physics Laboratory Co Ltd
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Zsolt Durkó
Semilab Semiconductor Physics Laboratory Co Ltd
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Abstract

Silicon epitaxy is an essential building block in the manufacturing of complementary metal-oxide semiconductor (CMOS) devices. Accurate determination of epitaxial layer thickness is indispensable for a uniform and reproducible process. In this paper, we compare thickness values of the transition zone in silicon epitaxial wafers obtained by two of Semilab’s production-compatible electrical and optical characterization techniques: Fourier-transform infrared (FTIR) reflectometry and spreading resistance profiling (SRP). We demonstrate a high correlation between transition zone thicknesses obtained from the optical modelling of FTIR reflectance spectra and SRP profiles. The dependance of transition zone thickness change on the high-temperature annealing steps is also examined. FTIR reflectometry thus offers a quick, contactless alternative for obtaining structural parameters of an epitaxial layer, and these values can be well matched to those given by SRP.
Submitted to Applied Research
05 Feb 2024Review(s) Completed, Editorial Evaluation Pending
17 Feb 2024Editorial Decision: Revise Minor
26 Feb 2024Reviewer(s) Assigned