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\begin{document}

\title{Epitaxial silicon transition zone measurements by spreading resistance
profiling (SRP) and Fourier transform infrared (FTIR) reflectometry}



\author[1]{Peter Basa}%
\author[1]{Eszter Najbauer}%
\author[1]{Lucza Sinkó}%
\author[1]{Szilvia Biró}%
\author[1]{Zsolt Durkó}%
\affil[1]{Semilab Semiconductor Physics Laboratory Co Ltd}%


\vspace{-1em}



  
  \date{May 22, 2024}


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\begin{abstract}
Silicon epitaxy is an essential building block in the manufacturing of
complementary metal-oxide semiconductor (CMOS) devices. Accurate
determination of epitaxial layer thickness is indispensable for a
uniform and reproducible process. In this paper, we compare thickness
values of the transition zone in silicon epitaxial wafers obtained by
two of Semilab's production-compatible electrical and optical
characterization techniques: Fourier-transform infrared (FTIR)
reflectometry and spreading resistance profiling (SRP). We demonstrate a
high correlation between transition zone thicknesses obtained from the
optical modelling of FTIR reflectance spectra and SRP profiles. The
dependance of transition zone thickness change on the high-temperature
annealing steps is also examined. FTIR reflectometry thus offers a
quick, contactless alternative for obtaining structural parameters of an
epitaxial layer, and these values can be well matched to those given by
SRP.%
\end{abstract}%



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\textbf{Hosted file}

\verb`Semilab-ICAE_2023_(article-template).docx`  available at \url{https://authorea.com/users/495188/articles/739500-epitaxial-silicon-transition-zone-measurements-by-spreading-resistance-profiling-srp-and-fourier-transform-infrared-ftir-reflectometry}

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