Abstract
This paper presents the room temperature performance of Si MOSFET
nanowires subjected to NBTI (Negative Bias temperature Instability) and
HCI (Hot Carrier Injection) stress. The static and dynamic
characterizations were carried out with an enormous amount of stress
adequate for a trapping / detrapping corresponding to NBTI and HCI. A
simulated aging test bench has been designed to evaluate the lifetime of
trapping / detrapping loads under resistive stress with an ambient
temperature of 300K.