Abstract
In this paper, DC compact model of a resistive-switching random-access
memory (ReRAM) has been characterized and developed. ReRAM is one of the
types of nonvolatile memory that is a promising candidate for use in the
future. It is currently being actively studied for use in fields such as
neuromorphic and AI computing due to its advantages such as fast
switching speed and low operating voltage. Since the use of ReRAM in
this field is used as a large-scale array simulation, a compact model is
required to confirm the operation characteristics. The compact model was
calibrated based on the measured values of two actually fabricated ReRAM
devices using HfOx and SiNx materials as switching layers. In addition,
this compact model was written using Verilog-A so that it can be
directly applied to SPICE simulation. We have seen that it is possible
to have a compact model with high accuracy for with different switching
layers ReRAM devices when adjusting the parameters in current density
equations and fitting parameters.