that the thermal resistance of the bilayer graphene hot electron bolometer will increase. This will decrease the thermal fluctuation noise equivalent power (NEP,) thus increasing the overall performance of the bolometer. If, however, a bias voltage is applied to the bilayer graphene, it is then possible to increase DC conductivity of the bilayer graphene sample. As such, the increase in conductivity will result in a photoconductively induced voltage signal. By setting the temperature close to the CDW phase change temperature, photoconductive response can be increased by roughly an order of magnitude; since the CDW gap in bilayer graphene is about 70meV [11].