As CDWs form due to a phase transition, transport properties change somewhat strongly near the phase transition temperature. As such, exciting opportunities demonstrate themselves in terms of device applications. Several demonstrations of such device-related applications exist. One such example is a current-effect transistor, where a transverse current is applied to NbSe_3[8] to reduce the CDW depinning threshold voltage; thereby controlling CDW transport. Another paper utilizes the commensurate/nearly commensurate (C/NC) phase change interval [9]. By setting the temperature to be at a range where the C/NC phases demonstrate hystheresis depending on whether the sample is cooled or warmed, it is possible to set the system to a metastable state. Then, by gradually applying increasing voltage, a phase change is induced.