that the thermal resistance of the bilayer graphene hot electron bolometer will increase even more so due to the differential increase in \(C_V\). This will decrease the thermal fluctuation noise equivalent power (NEP,) thus increasing the overall performance of the bolometer. If, however, a bias voltage is applied to the bilayer graphene, it is then possible to increase DC conductivity of the bilayer graphene sample. As such, the increase in conductivity will result in a photoconductively induced voltage signal. By setting the temperature close to the CDW phase change temperature, photoconductive response can be increased by roughly an order of magnitude; since the CDW gap in bilayer graphene is about 70meV [11].