deletions | additions       diff --git a/As_seen_in_figure_1a__.tex b/As_seen_in_figure_1a__.tex  index bf95383..a8fb8d8 100644  --- a/As_seen_in_figure_1a__.tex  +++ b/As_seen_in_figure_1a__.tex 
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For the 1D case, the transmission probability can be used in equation 3 to solve for current.  \begin{equation}  I J_d  = \frac{qg_sg_v}{\hbar}\int dET(E) \frac{qg_sg_v}{\hbar2\Pi}\int dE T(E)[]  \end{equation}  For conventional RTD's, the low energy band structure can be represented by a parabolic band with a effective mass. When barrier height and effective mass are chosen appropriately, this scheme can represent conventional RTD's with parabolic band structures, such as GaAs RTD's. The general form of the I-V curve for a RTD can be reproduced using equation 3. As seen in figure 2, once past the resonant region, the current goes through a negative differential resistance region.