deletions | additions       diff --git a/section_Topological_Insulators.tex b/section_Topological_Insulators.tex  index a6d3586..8b487c2 100644  --- a/section_Topological_Insulators.tex  +++ b/section_Topological_Insulators.tex 
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\end{equation}  \begin{equation}  M(k)=M-B(kx^2+ky^2)  \end{equation} In this model, A, B, C, and D are material parameters that depend on the material geometry. Using this scheme, the band structure for HgTe/CdTe topological insulators can be calculated. As shown in figure 3a-c, the structure depends on the quantum well thickness greatly. At a critical thickness ($\approx 0.63$