deletions | additions       diff --git a/section_Concluding_Remarks.tex b/section_Concluding_Remarks.tex  index 18200b6..0f5da42 100644  --- a/section_Concluding_Remarks.tex  +++ b/section_Concluding_Remarks.tex 
...
Up to this point, there has been little focus on the use of topological insulators in RTD's. Due to the nature of transport in topological insulators, it is found that transport through a topologically unique RTD could have spin polarization. It is also found that the general I-V curve form is retained in topological RTD's. Therefore, topological RTD's have strong potential and applicability in devices that require diode and spin control.  Topologically non-trivial RTD's have potential, but more analysis is needed to understand the subtle properties and feasibility of such a device. This work was most concentrated on attaining a preliminary understanding of this kind of device. For that reason, assumptions and simplifications were made to facilitate entry into the subject, but more quantitative methods should be employed to gain a deeper understanding. Stepping away from the square barrier simplification and the non-specific transmission probability expression would be an good way to probesome of  the deeper physics of this device.