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Maxwell Fishman edited As_seen_in_figure_1a__.tex
over 8 years ago
Commit id: 7362d633f47026ed2c791cd1c4cb1adb4bda2fc2
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For the 1D case, the transmission probability can be used in equation 3 to solve for current.
\begin{equation}
J_d =
\frac{qg_sg_v}{\hbar2\pi}\int \frac{qg_sg_v}{\hbar(2\pi)^d}\int dE T(E)[]
\end{equation}
For conventional RTD's, the low energy band structure can be represented by a parabolic band with a effective mass. When barrier height and effective mass are chosen appropriately, this scheme can represent conventional RTD's with parabolic band structures, such as GaAs RTD's. The general form of the I-V curve for a RTD can be reproduced using equation 3. As seen in figure 2, once past the resonant region, the current goes through a negative differential resistance region.