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Maxwell Fishman edited As_seen_in_figure_1a__.tex
over 8 years ago
Commit id: 71d27f8e1c79e302e67710cb8def3ca755484acb
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\begin{equation}
J_d = \frac{qg_sg_v}{\hbar(2\pi)^d}\int d^dk* v_g(k)T(k)[f_L(k)-f_R(k)]
\end{equation}
For conventional RTD's, the low energy band structure can be represented by a parabolic band with a effective mass. When barrier height and effective mass are chosen appropriately, this scheme can represent conventional RTD's with parabolic band structures, such as GaAs RTD's. The general form of the I-V curve for a RTD can be reproduced using equation 3. As seen in figure 2, once past the resonant region, the current goes through a negative differential resistance
region. region as expected.