deletions | additions       diff --git a/As_seen_in_figure_1a__.tex b/As_seen_in_figure_1a__.tex  index 9518f44..f589f4f 100644  --- a/As_seen_in_figure_1a__.tex  +++ b/As_seen_in_figure_1a__.tex 
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As seen in figure 1a and 1b, at a certain electron energy and applied bias resonant conditions are met and the transmission probability spikes in value. Changing the voltage in figure 1a and the electron energy in figure 1b has the effect of shifting the region in which resonance occurs. In this respect, RTD's are tunable to the required application.  Using the Landauer formalism, the transmission probability can be used in equation 2 to solve for current.  \begin{equation}  T_{tot}(E) = \frac{T_1T_2}{(1-\sqrt{R_1R_2})^2+4\sqrt{R_1R_2}cos^2(\Phi)}  \end{equation}  For conventional RTD's, the low energy band structure can be represented by a parabolic band with a effective mass. When barrier height and effective mass are chosen appropriately, this scheme can represent conventional RTD's with parabolic band structures, such as GaAs RTD's. Using this band structure,