deletions | additions       diff --git a/section_Topological_Insulators.tex b/section_Topological_Insulators.tex  index f4f37ca..861d9d1 100644  --- a/section_Topological_Insulators.tex  +++ b/section_Topological_Insulators.tex 
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\end{equation}  In this model, A, B, C, and D are material parameters that depend on the material geometry. Refer to table 1 for parameter values at different quantum well thicknesses. Using this scheme, the band structure for HgTe/CdTe topological insulators can be calculated. As shown in figure 3a-c, the structure depends on the quantum well thickness greatly. At a critical thickness ($\approx 0.63${\AA}), the bands become inverted, indicating a toplogical phase change.  \begin {table}[H]  \caption {Table Title} \label{tab:title} {table}  \begin{tabular}{l*{6}{c}r}  Team & P & W & D & L & F & A & Pts \\  \hline 
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Benfica & 6 & 2 & 1 & 3 & 7 & 8 & 7 \\  FC Copenhagen & 6 & 2 & 1 & 3 & 5 & 8 & 7 \\  \end{tabular}  \caption{gfsgsd}   \end{table}  \begin{table}   \begin{tabular}{ c c }  ffdhrtfhdf & bdxfb \\   fsdfsd & vdfsdfb \\   \end{tabular}   \caption{gfsgsd}  \end{table}