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\section{Analysis Methodology}  As our understanding of the physical properties behind topological insulators grows, so does our speculations on possible uses for this type of material in devices. Although the use of topological insulators in certain devices has been analyzed, there is little focus on the use of this material in a RTD. There is potential to uncover interesting and unique properties by investigating this area.  In order to analyze a topological RTD, the first step should be to analyze a conventional RTD. Using the WKB approximation, the transmission coefficient can be found for the double barrier system. system\cite{Bohm_2012}.  This can subsequently be used to solve for the current. Using the same process, the transmission coefficient and current can also be found when considering a RTD with topological insulator materials. The difference will be in the energy dispersions, but this can be found for topological insulators using a known form of the low energy hamiltonian\cite{Konig_2007}. Comparing the two sets of data, the unique properties of the topological RTD can be extracted. Further examination of this system can also be considered by analyzing the systems using the more accurate Feynman path integral formalism.