deletions | additions       diff --git a/subsection_Secondary_Electrons_Secondary_electrons__.tex b/subsection_Secondary_Electrons_Secondary_electrons__.tex  index 52aeb28..b492901 100644  --- a/subsection_Secondary_Electrons_Secondary_electrons__.tex  +++ b/subsection_Secondary_Electrons_Secondary_electrons__.tex 
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The fraction of detection of SE by an $V$ biased ESD with detection area with radius $r$ placed $d$ from the sample is\cite{Huxley_1949}   \begin{equation}  R=\frac{I_{detected}}{I_0 \delta(\theta)} = 1-\frac{1}{G}exp\left( 1-\frac{1}{G} \space exp\left(  \frac{eV}{2k_BT\epsilon}(1-G) \right) \end{equation}  where $G$ is the geometric factor given determined by the experimental setup.  \begin{equation}