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\section{Introduction}
When quasi-ID materials such as NbSe$_3$ undergo the Peierls transition \cite{Peierls_1956}, the charge density in the valence band fluctuates according to the lattice potential. With larger potential distortion in the lattice, say, the cations form dimers changing the lattice spacing from $a$ to $2a$, the electrons tend to pile up around the
two close cations, dimers, analogous to the bounding state in the molecules. If external DC voltage is applied, the CDW is pinned near the lattice potential on the site until the external voltage exceeds the threshold voltage and CDW starts to move. The DC conductivity was given empirically as the following expression\cite{Bardeen_1979}.
\begin{equation}
\sigma_{dc}(E) = \sigma_a + \sigma_b\space exp\left(-\frac{E_0}{E}\right)
\end{equation}