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\section{Introduction}  We need more models  \section{Derivation}  You can get started by \textbf{double clicking} this text block and begin editing. You can also click the \textbf{Text} button below Given the difficulty of creating good ohmic contacts  to add new block elements. Or you can \textbf{drag and drop $n$-doped GaN, the nitrides community would benefit greatly from alternative structures which allow large currents to flow from $p$-contacts into $n$-GaN. One such possibility is "spiked" $pn$ junctions in GaN, where the regrowth of the junction interface produces a built-in sheet charge. This sheet charge notches the band diagram, forcing the high electric fields necessary for large tunneling currents. Recent work \citep{Bader} has derived analytical approximations to the band diagrams of these devices, yet, due to the highly non-uniform fields, simple expressions of the tunneling currents in these devices remain  an image} right onto this text. Happy writing!  Just wanted open problem. Relating the design parameters, eg geometry and doping, of these interfaces to the tunneling current will be vital for rapid modeling if these structures are  to check on more stuff. find application in LEDs and more.