Comprehensive Modeling of Switching Behaviour in BEOL FeFET for
Monolithic 3D Integration
Abstract
We have developed a comprehensive modeling framework to explain the
switching characteristics of BEOL-compatible FeFET with an amorphous
IGZO channel. Our TCAD-based modeling framework, calibrated against
measurement data, jointly incorporates a) the distributed channel, b) a
physics- based nucleation-limited switching dynamics model for multi-
domain ferroelectric polarization (PFE) and c) the domain-domain
interaction. To our knowledge, this is the first demonstration of a
physics-based comprehensive model of BEOL-compatible FeFET. Our model
reproduces and explains the experimentally- observed abrupt current
jumps in the reverse and forward DC sweeps. Further, our model is
capable of processing arbitrary input waveforms such as quasi-DC and
different kinds of pulse trains used in neuromorphic applications. This
comprehensive modeling framework would enable researchers to explore the
BEOL FeFET applications and guide device optimization and development.