Roadmap for Ferroelectric Memory: Challenges and Opportunities for IMC
Applications
Abstract
CMOS compatibility and the low process temperature of hafnium
oxide(HfO2) make HfO2-based ferroelectric FETs an excellent candidate
for logic, memory, and neuromorphic devices. This article discusses the
challenges and opportunities of using hafnium oxide-basedferroelectric
memory for in-memory-computing applications. Finally, we try to draw the
roadmap for them.