We found carrier densities and Hall coefficients as follows:
For n-Ge: \[R_{H}=-4.99\cdot 10^{-3}\pm -0.0998 \cdot 10^{-3}\frac{\textrm{Vm}}{\textrm{AT}}\] \[n=-1.25\cdot 10^{21}\pm 0.025 \cdot 10^{21} \textrm{m}^{-3}\]
where \(n\) represents the carrier density in number of carriers (which has no units) per cubic meter and \(R_{H}\) represents Hall coefficient in \(\frac{m^3}{C}\).
For p-Ge: \[R_{H}=6.6\cdot 10^{-3}\frac{\textrm{Vm}}{\textrm{AT}}\] \[n=1.11\cdot 10^{21}\pm 0.02 \cdot 10^{21} \textrm{m}^{-3}\]
Since \(V_H\) and \(B\) in Equation \ref{eq:Hallcoefficient} have different signs, it makes sense that \(n\) for n-type is negative, and \(n\) for p-type is positive.
By using the same method, we found the carrier density and Hall coefficient of the silver sample, which are:
\[R_{H}=-2.24 \cdot 10^{-10}\pm -0.04 \cdot 10^{-10} \frac{\textrm{Vm}}{\textrm{AT}}\] \[n=-2.79\cdot 10^{28}\pm 0.06\cdot 10^{28} \textrm{m}^{-3}\]