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\section{Enhancing Nanophotonic Materials for CMOS Integratable Waveguides}
Sommerfeld, in 1909, proposed a phenomenon now known as surface plasmonic polaritons –referring to a particular frequency dependent diffusion response of metal material below the material’s plasma frequency. Where plasma frequency is a tunable parameter as it is proportional to a material’s electron density and dielectric function. In addition, the modal size on the x-axis is also become a tuned parameter of the material. So the obvious question to ask is what enabled such rapid improvements as sited in figure 1and figure 2.
The answer is in figure 3. To stay on pace with decreasing feature sizes of CMOS IC it became obvious that traditional noble metals were limited in applications of nanophotonic waveguides. In particular, their inability to be used as thin films due to their high surface energy and the difficulty incorporating them with existing CMOS processing step of etching. Therefore, alternative materials have been found to achieve impressive results on the order of macroscopic optical fiber waveguies. One of the most recent innovations in CMOS compatible nanophotonic waveguides, occurred in 2014, and involves the transition metal nitride molecule titanium nitride (TiN) and the dielectric silicon nitride (Si3N4). The resulting combinations was a tuned material much in the way one would tune an antenna using inductors and capacitors in analog integrated circuit design. It is among the lowest loss materials for either noble gas metals or alternative metals at any mode size.
So far it has been shown that tuned materials have greatly enhanced the current state and projectile of nanophotonic CMOS integratable waveguides. Now, we will discuss the approach of designing nanophotonic light sources and photodetectors.
