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Chris Spencer added A_newer_type_of_Si__.tex
over 8 years ago
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A newer type of Si-based laser, the bulk silicon laser, was developed recently in 2011 by the Institute of Optics and Atomic Physics in Berlin, Germany. [10] In this design, a single-crystal bulk silicon medium is used to produce the Raman laser instead of a waveguide, see Figure 11. The bulk Si laser has significant advantages over the waveguide laser, including higher peak power and pulse energy, a much larger laser beam area (1 mm or more for bulk Si vs. 1 µm for waveguide), the absence of a waveguide boundary surface (allows for different types measurements), and an increased potential for new applications. The team in Germany uses the technique of cooling the silicon sample down to $\approx$ 10 K in order to overcome the FCA losses instead of applying a voltage. Only pulsed operation has been achieved so far in a bulk silicon laser and, interestingly, the Raman laser pulse duration is about 4 times shorter than the input pulse duration (see Figure 12). The reason for this reduced pulse duration is that the lasing threshold is not reached until the pulse nears peak power, and once the pulse power begins to decrease the lasing power decreases more rapidly. One downside of the bulk laser is the “formation of the defocusing lens caused by refractive index changes from FC concentration gradients, induced by the transmitted laser pulse.” [10] Fortunately, this effect can be compensated for.
