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\section{Germanium Photodetector}  The Germanium photodetector that is a strong candidate to be integrated in CMOS technology can be set up by use of p-i-n junction.P-i-n meaning p doped-instrinsic-n doped material, the addition of an instrinsic semiconductor can effectively increase the depletion region between the doped regions [17]. The intrinsic layer is desired to be thick enough to absorb most of the incident radiation so that free carriers can be generated in this region [17]. Through generation of carriers from radiation, a photocurrent is established. This effectively marries a electronic circuit with a photonic circuit. Germanium photodetectors have excellent absorption in the near-infrared [14], which is useful for telecommunication devices that already using infrared wavelengths and the better absorption leads to be production of photocurrents leading to better detection of light. The most effective Ge photodetectors are reported in a vertical p-i-n geometries. Most useful property of vertical p-i-n geometries is that they allow for a uniform electric field to be created in the intrinsic layer, increased carrier transport is made therefore by drift and not diffusion [14]. Basic vertical p-i-n geometries are show in figure 13.