Transistors are devices that are used to direct or amplify electricity, and heavily utilized in the production of computer chips. Conventially made of bulk silicon, GaN nanowires have been researched for their application in this field due to their high electron mobility and stability in high voltages relative to silicon. GaN nanowire based FETs have been developed to replace silicon nanowire FETs, due to increased output drive currents, allowing its usage in currents with extremely low power supplies. It was also discovered that the FET performance was positively correlated with the gate length. This being said, most GaN nanowire transistors fall far short from conventional bulk silicon transistors due to the high cost of production and inefficiency of GaN nanowire devices. \cite{Kumar_2014}
One of the more recent developments of transistors utilizing GaN nanowires has more exotic architectures. This includes a vertical-channel GaN junctionless transistor, a highly experimental design that was made possible only through the vertical growth patterns of nanowires. It featured a geometrical design that enhances the device’s electrical performance. Initial studies had confirmed that the transistor had a wide bandgap and high electron velocity; though desirable properties, these were also found in bulk GaN and not unique to GaN nanowires. These junctionless nanowire transistors based on GaN nanowires also feature tunable properties based on doping concentrations and the radii of the nanowires. \cite{Seo_2014}