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\section{Transistors} \subsection{Transistors}  Transistors are devices that are used to direct or amplify electricity, and heavily utilized in the production of computerized devices. GaN nanowires have been researched for their application in this field due to their high electron mobility and stability in high voltages compared to conventional materials such as silicon. Originally, single GaN nanowires and doped with magnesium were assembled into field effect transistors (FETs) demonstrated hole nobilities of 12 cm^2/V*s. \cite{Zhong_2003} Further research has utilized GaN nanowire based FETs to replace silicon nanowire FETs, due to increased output drive currents, allowing its usage in currents with extremely low power supplies. This design also discovered that the FET performance was positively correlated with the gate length. \cite{T_V_2014}