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Transistors are devices that are used to direct or amplify electricity, and heavily utilized in the production of computerized devices. GaN nanowires have been researched for their application in this field due to their high electron mobility and stability in high voltages compared to conventional materials such as silicon. Originally, single GaN nanowires and doped with magnesium were assembled into field effect transistors (FETs) demonstrated hole nobilities of 12 cm^2/V*s. \cite{Zhong_2003} Further research has utilized GaN nanowire based FETs to replace silicon nanowire FETs, due to increased output drive currents, allowing its usage in currents with extremely low power supplies. This design also discovered that the FET performance was positively correlated with the gate length. \cite{T_V_2014}  One of the more recent developments of transistors utilizing GaN nanowires have more exotic architectures. This includes a vertical-channel GaN junctionless transistor, a highly experimental design that is made possible only through the vertical growth patterns of nanowires. It features a geometrical design that enhances the device’s electrical performance. Initial studies have confirmed that the transistor has a wide bandgap and high electron velocity; though desirable properties, these are also found in bulk GaN and not isolated to GaN nanowires. \cite{Doria_2013} \cite{Seo_2014}  Research has also resulted in junctionless nanowire transistors based on GaN nanowires, with tunable properties based on doping concentrations and the radii of the nanowires. \cite{Doria_2013}