deletions | additions       diff --git a/subsection_Light_Emitting_Diodes_Another__.tex b/subsection_Light_Emitting_Diodes_Another__.tex  index 3a5eac5..2bfcefd 100644  --- a/subsection_Light_Emitting_Diodes_Another__.tex  +++ b/subsection_Light_Emitting_Diodes_Another__.tex 
...
\subsection{Light Emitting Diodes}  Another device that has been demonstrated by GaN nanowires is a light emitting diode. These devices are able to emit light when an electric current is passed through a p-n junction. In order to establish both p-type and n-type semiconductors to create LEDs, GaN nanowires are doped with a metal such as magnesium. Usually, InGaN nanowires are used on a flat GaN substrate. Conventional methods of creating such devices utilize a dopant free layer of GaN, which acts as a n-type, and then utilizes a method to connect InGaN nanowires which serve as a p-type. One device that consisted of these nanowires managed to display a linear relationship between the light output and the current density, as expected. \cite{Banerjee 2015} \cite{Banerjee_2015}  Since then, more unique LEDs have also been developed, such as axial nanowire LEDs that consisted of InGaN and GaN. This structure is able to save space, but is also limited by its carrier injection efficiency. \cite{zhang_2014} Another LED device similarity utilized an axial structure of InGaN and GaN, but utilized a graphene contact for hole injection into the n-GaN. This is unique, as graphene is another nanomaterial that provides high electrical conductivity as well as transparency, which is optimal for light-emitting applications. \cite{Tchernycheva_2014}