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Jeffrey Hong added In_2013_another_group_published__.tex
about 9 years ago
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In 2013, another group published a method in which they etched the GaN film with solution of phosphoric acid. By increasing etch time, they observed that the overall height of the nanowires decreased while the overall diameter of the nanowires increased. However, the nanowires they created were very short, with the tallest length reported only around 400 nm. Though etching of nanowires is not as developed as VLS syntheses, it has demonstrated promise in controlling the specificity of the physical nanowire characteristics without having the final product being exposed to catalyst impurities. \cite{Bharrat_2013}
