deletions | additions       diff --git a/subsection_Etching_Synthesis_A_novel__.tex b/subsection_Etching_Synthesis_A_novel__.tex  index 807f3aa..d7405a5 100644  --- a/subsection_Etching_Synthesis_A_novel__.tex  +++ b/subsection_Etching_Synthesis_A_novel__.tex 
...
\subsection{Etching Synthesis}  A novel top-down  electroless etching method to create GaN nanowires was reported by the Najar group in 2012. This method differed from VLS as it did not rely on nucleation points from which the nanowires grow directly, but rather created utilized  adoped  GaN film. This film was grown on a sapphire substrate, and then treated with acetone and nitric acid. 10 nm thick strips of platinum were deposited upon the cleaned GaN film, and the samples were etched for to  form very long nanowires (>10μm). This technique is very similar to the etching technologies utilized for creating computer chips; this being said, it also requires more equipment, reagents, and labor than VLS techniques. \cite{Najar_2012}