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Further advances in the technology led to a patent being filed on GaN nanowires in 2014, which utilized a catalytic layer of silicon oxides as the substrate to promote nanowire growth rather than pure silicon. (US Patent 8,691,011) It was also noted that there have been more unique developments in the physical equipment, such as the usage of a 1000W lamp in order to heat up the substrate surface rather than a furace. Moreover, the feed gas reagents have been replaced with metalorganic compounds, such as trisdimethylamminophosphine, whose byproducts are stable and volatile, reducing contamination of the final product. Another benefit of these new feed gases is their relative nontoxicity to human health. \cite{Munden_2014}  The integration of other chemicals into gallium nitride nanowires, such as indium gallium nitride (InGaN) "quantum disks", has also been achieved through plasma-assisted molecular beam epitaxy. The presence of these disks often results in the concentration of indium between the disks, which is able to reduce stress along the entirely of the nanowire. The heterogeneous integration of InGaN as well as other materials in the future may result in a new method to dope the GaN nanowires in order to induce various characteristics. \cite{Roshko_2014} \cite{Tsatsulnikov_2012}