deletions | additions       diff --git a/In_2013_another_group_published__.tex b/In_2013_another_group_published__.tex  index 8f886cb..d078def 100644  --- a/In_2013_another_group_published__.tex  +++ b/In_2013_another_group_published__.tex 
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In 2013, another group published a method in which they etched the GaN film with solution of phosphoric acid. By increasing etch time, they observed that the overall height of the nanowires decreased while the overall diameter of the nanowires increased. However, the nanowires they created were very short, with the tallest length reported only around 400 nm. Though etching of nanowires is not as developed as VLS syntheses, it has demonstrated promise in controlling the specificity of the physical nanowire characteristics without having the final product being exposed to catalyst impurities. \cite{Bharrat_2013} Reactive-ion etching was also utilized by the Haab group in order to create GaN nanowires from a GaN film grown on a sapphire substrate. By pulsing a chlorine-argon gas plasma at the film, they managed to form nanowires between 20 – 60 nm in diameter and up to 100 nm in length within minutes. The etching time was the most important determinant in the physical dimensions of the nanowires, while the actual thickness of the starting GaN film determined their average density. This method, requiring only 2 minutes of etching time to reach a nanowire length of 100 nm and a nanowire diameter of 25 nm, demonstrates one of the fastest syntheses in terms of production time. \cite{Haab_2014}