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\subsection{Light Emitting Diodes}  Another device that has been demonstrated by GaN nanowires is a light emitting diode. These devices diode (LED). LEDs  are able to emit light when an electric current is passed through a p-n junction. In order to establish both p-type and n-type semiconductors to create LEDs, GaN nanowires are doped with a metal such as magnesium. another metal.  Usually, InGaN nanowires are used on a flat GaN substrate. Conventional methods of creating such devices utilize a dopant free layer of GaN, which acts as a n-type, and InGaN nanowires which serve as a p-type. One device that consisted of these nanowires managed to display a linear relationship between the light output and the current density, as expected. \cite{Banerjee_2015} Since then, more unique LEDs have also been developed, such as axial nanowire LEDs that consisted of InGaN and GaN. This structure was able to save space, but was also limited by its carrier injection efficiency. \cite{zhang_2014} Another LED device similarity utilized an axial structure of InGaN and GaN, but featured a graphene contact for hole injection into the n-GaN. This Was unique, as graphene is another nanomaterial that provides high electrical conductivity as well as transparency: optimal for light-emitting applications. \cite{Tchernycheva_2014}