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# Design Modification Proposal
**grain boundaries** can alter electronic properties \cite{Yan_2011}
**defect chemistry** Pushing cell conversion efficiencies beyond 20% will require increasing VOC beyond 1V. However the present pathway of processing optimization will likely yield VOC and efficiency converging on 0.9 V and <20%, respectively.\cite{McCandless_2013}
**Back contacts** Degradation
effects are often associated with metal diffusion from the back contact of the cell, which is Cu in most cases.However, cells
with stable back contact can also exhibit instability, as also all the other cell layers are potential sources of impurities causing
instability.Cell degradation due to generation of defects from external influences like particle irradiation, e.g.in space, is another
reason for instability.The development of stable back contacts as well as sources of instability in the cell performance are
discussed with a special focus on the CdS layer and CdTeyCdS interface, which are very sensitive to the accumulation of
impurities and defects.\cite{B_tzner_2004}
