deletions | additions       diff --git a/Design_Modification_Proposal_grain_boundaries__.md b/Design_Modification_Proposal_grain_boundaries__.md  index 86154fd..1b64a4d 100644  --- a/Design_Modification_Proposal_grain_boundaries__.md  +++ b/Design_Modification_Proposal_grain_boundaries__.md 
...
amorphous and thin-film microcrystalline silicon. They use two strategies to trap light inside the cell. One is to deposit a mirror on the back of the cell, just above the metal back contact. The other is to texture the top, transparent conductive oxide contact so that light is bent as it enters the cell (making the first pass longer, and leading to total internal reflection if combined with a back-side mirror). components, and layers are in the 0.1- to 0.3-µm range. The mirror material is a combination of a transparent conductive oxide (ZnO) and a silver or aluminum film on top of the back contact.  **PV in 2030**  For 10% PV electricity production in 2030, the numbers are encouraging for 0.67-µm layer thickness, and of course better for 0.2 µm. In this case, all modules could be CdTe. ** ultrathin back surface field and backside distributed Bragg reflector **  distributed Bragg reflector (DBR) as an optical reflector and a ZnTe layer as back surface field (BSF)  layer. the proposed cell structure had an open-circuit voltage of 1.062  V, a short-circuit current density of 24.64 mA/cm2  , and a fill factor of 81.3%, corresponding to a total area conversion efficiency of 21.02%. \cite{Khosroabadi_2014}