deletions | additions       diff --git a/A_PV_will_reach_the__.md b/A_PV_will_reach_the__.md  index 48ae5ea..21accc6 100644  --- a/A_PV_will_reach_the__.md  +++ b/A_PV_will_reach_the__.md 
...
A PV will reach the SQ limit if it's material properties match the assumptions made to derive to derive this limit. Following we can compare these assumptions with real material conditions:  * All incident light is absorbed below the band gap of the material, and each absorbed photon generates an electron-hole pair.  * **Recombination Only **Radiative Recombination** occurs. In reality there  is direct** (band always a degree of non-radiative process ocurring such as Shockley-Read-Hall, Auger and band to band (BB). These process strongly affect the cell’s performance depending on semiconductor bandgap, material quality, doping level, fabrication process, or injection level. SRH is due  to band) various impurities  and no radiative recombination dislocations, these create energy levels within the band gap corresponding to neither donor nor acceptor levels. Auger  is present. the dominating process at high carrier concentrations caused by heavy doping or high level injection, which ultimately affects the lifetime in efficency. Band to Band is to weakly absorbed photons that exit the semiconductor.  * **infinite mobility** and **perfectly reflecting contacts**, which relate to charge transport: Photons emitted internally are likely to be trapped, re-absorbed, and re-emitted, leading to photon recycling in a open-circuit. Real materials have a non-ideal back contact, so they will not benefit completely from the photon recycling that occurs in a ideal reflecting system. \cite{Miller_2012}, Real materials also have finite carrier mobility, which translate to series resistance losses.