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**On defects** These defects can act as recombination centres during PV process and reduce device parameters drastically.  **Intermixing at the Junction**This formation of intermediate material is helpful in creating a gradual energy band gap transition from 2.42 eV (Eg of CdS) to 1.45 eV (Eg of CdTe), producing a graded bandgap hetero-junction and therefore enhancing the internal electric field of the device which helps in charge carrier separation and collection. \cite{Jahn_2001} **Impact of CdTe on Tellurium deposits:**  Here, I argue that the long-term potential for CdTe PV modules need not be bleak, given realistic developments in module technology and Te recovery.  \cite{Zweibel_2010}  **Texured and mirror**  amorphous and thin-film microcrystalline silicon. They use two strategies to trap light inside the cell. One is to deposit a mirror on the back of the cell, just above the metal back contact. The other is to texture the top, transparent conductive oxide contact so that light is bent as it enters the cell (making the first pass longer, and leading to total internal reflection if combined with a back-side mirror). components, and layers are in the 0.1- to 0.3-µm range. The mirror material is a combination of a transparent conductive oxide (ZnO) and a silver or aluminum film on top of the back contact.