Benjamin Sanchez Lengeling deleted Series_resistance_loses_The_SQ__.md  almost 9 years ago

Commit id: 2a8bde011bbf293ca04f058572d91660c1b1a0f8

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**Series resistance loses**  The SQ model assumes an infinite carrier mobility, due to the finite carrier mobility of a real material.   A second major limiting factor leading to a degradation of the cell efficiency in relation to the theoretical values pre-dicted by the Shockley and Queisser model is associated with series resistance losses, basically caused by the finite value of the carrier mobility.  Series resistance effects can be taken into account by introducing a lumped series resistance parameter \(Rs\), into the initial SQ equation, leading to the well-known implicit equation for the output current of a solar cell:  \[  I = I_{ph}-I_0 exp(\frac{q(V-IR_S)}{kT}) + \frac{V-IR_S}{R_{sh}}  \]  where \(I_ph\) is the photo-generated current, \(I_0\) and \(R_{sh}\) is the shunt resistance of the cell.  **Figure idea:** Analogous to the 2015 article, create an Effect of series resistance varing \( R_S \).         

Material_Genomes_Initiative_How_should__.md  no_non_radiative_recombination_processes__.md  Idea_zeta__SQ_can_be__.md  Series_resistance_loses_The_SQ__.md  The_other_important_point_is__.tex  The_principal_difference_between_111__.tex  three_companies_broke_the_record__.tex