deletions | additions       diff --git a/The_SQ_limit_is_a__.md b/The_SQ_limit_is_a__.md  index ea02d34..1874ef1 100644  --- a/The_SQ_limit_is_a__.md  +++ b/The_SQ_limit_is_a__.md 
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( \(J_{SC} \) ), open-circuit voltage ( \(V_{OC} \) ), and fill factor ( \$FF\$ ) in the 24-26 mA/cm², 840-850 mV, and 74-76% ranges respectively.  Defects such as grain boundaries can alter these device parameter\cite{Yan_2011} in a uncontrolled fashion. Pushing cell conversion efficiencies beyond 20% will require primarly increasing \( V_{OC} \) beyond 1V. The current(  \(V_{OC} \))  is well bellow the expected 1.2 V with respect to the absorber layer band gap. However the present pathway of processing optimization will likely yield \( V_{OC} \) and efficiency converging on 0.9 V and <20%, respectively \cite{McCandless_2013}.