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**no non-radiative recombination processes :** The SQ limit only assumes radiative recombination as the only recombination channel for the cell, which is not the case in real materials.  The magnitude of these non-radiative recombination losses can be characterized by the internal fluorescence efficiency, via the formula:  \[ \nu_{int\;fluo} = \frac{ R_{rad} }{ R_{rad}+R_{non-rad} } \]  To maximize \(\nu_{int\;fluo}\) we have to minimize \(R_{non-rad}\), which means optimizing the carrier lifetime for the recombination process. This can be modelled via 3 processes: the Shockley-Read-Hall (SRH), band to band, and Auger.  **Note:** We should figure out the different constants involved in this process.  - SRH involves: \(\tau_{n0}\) and \(\tau_{p0}\) are the equilibrium carrier lifetimes of electrons and holes, \(N_V\) and \(N_c\) are the effective densities of states in the valence and conduction bands, \(E_C\), \(E_V\) and \(E_R\) are the conduction band, valence band and trap level (in eV), and \(n_0\) and \(p_0\) are the equilibrium carrier concentrations.   - Auger: \( C_n \) Auger coefficient for electrons, \( C_p \) Auger coefficient for holes  - Band to Band: \( B\) radiative coefficient  - SRH equilibrium carrier lifetimes: \( \sigma_n \)  electron capture cross section, \( \sigma_p \) hole capture cross section, \( V_{th} \) carrier thermal velocity for \(n\) and \(p\), \(N_T\) trap concentration  **Should read-up on electrophysics to understand this more**  **Figure idea:** Analogeous to the 2015 article, create an excess carrier concentration plot for CdTe.