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\textbf{Abstract}  In the past few years, the field of indium gallium nitride (InGaN) nanowires has seen a great deal of interest, as the compositional tunability and conveniently placed band-gap of the material coincide quite well with the special physical qualities possessed by nanowire heterostructures. InGaN nanowire These nanowires can be grown with a variety of methods and in combination with other materials, producing a wide array of possible applications. Among these,  light-emitting diodes remain promising as a light source, with research efforts focused on efficiency, while substantial breakthroughs have been made in the field of photoelectrochemical catalysis, primarily through water splitting. Photovoltaic cells too hold promise, though they may be years away from application. In this review, we seek to inform the reader of key developments in the field of InGaN nanowire synthesis and application.