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John O. Curry added Given_such_successes_HCVD_remains__.tex
almost 9 years ago
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Given such successes, HCVD remains a common synthetic technique for InGaN. Recent work by Hahn, et al.\cite{Hahn_2013} used halide chemical vapor deposition to create InGaN nanowires with a compositional range of (${0.07
Metal-organic chemical vapor deposition (MOCVD), another method of CVD named for the form of its precursors, has become a useful tool in the development of more complicated InGaN nanowire heterostructures. With an interest in integrating the structural properties of nanowires with the current multiple quantum wells (MQWs) used in indutrial LEDs, Ra et al.\cite{Ra_2013} created InGaN quantum wells within doped GaN nanowires, using pulsed-flow MOCVD to create the different layers: a core of n-doper GaN nanowire, layered with InGaN and GaN, all covered with p-doped GaN. These nanowires showed a high level of efficiency, as well as four different emission peaks across the visible spectrum.
Another novel use of MOCVD was illustrated by Li et al\cite{Li_2014}, who used MOCVD as the key synthetic step in embedding nanopillar arrays into InGaN via nanosphere lithography. MOCVD was used to grown InGaN quantum wells, whereupon spheres of silica were employed as a dry-etch mask to create a nano-patterned structure. The nanopillars were then encased in p-type GaN, to create a wafer with embedded nanopillars that had a ~20 percent output power increase when compared to a non-embedded LED of similar dimensions.
