Transistors are at the heart of any electronic device. Of course, in order to make smaller devices the transistors must scale accordingly and so NW’s small dimensions naturally make it a candidate for transistor fabrication. In particular III-V NW (such as GaAs) are promising because of their long carrier lifetimes and carrier mobilities.\cite{Joyce_2013} GaAs NW high charge carrier mobility make it desirable trait for devices such as microchips, which have historically been dominated by Si technology. GaAs was found to have electron carrier mobility of 1000 \(\frac{cm^{2}}{V s}\) which is greater then the average electron carrier mobility of high performance silicon nanowire FET which is 30 to 560 \(\frac{cm^{2}}{V s}\).\cite{Cui_2003} \cite{Joyce_2013} Miao and coworkers have recently done record breaking work by creating GaAs NW arrays in planar (as opposed to typical vertical) form for T-gated high electron mobility transistors (HEMTs).\cite{Miao_2014} A 1.5x1.5 \(cm^2\) chip with 115 planar HEMTS was fabricated and characterized in terms of its DC current-voltage characteristics and radio frequency (RF) performance. Growth methods included etching alignment markers on a GaAs substrate with inductively coupled plasma, depositing Au seeds (100nm diameter and 300nm separation distance) and VLS growth.\cite{Miao_2013} Characterization testing found \(\frac{f_t}{f_{max}}=\frac{33}{75}GHz\) and \(\frac{I_{on}}{I^{off}}=10^4\). The GaAs NW chip greatly outperforms other current NW, carbon nanotube, or graphene Field Effect Transistors (FET) (Figure \ref{fig:birdss}). \cite{Miao_2014}