GaAs NWs have also been used for Gate-all-around (GAA) metal-oxide-semiconductor field-effect transistors (MOSFETs) design. Song and coworkers developed a GaAs based GAA MOSFET using metalorganic chemical vapor deposition and metal sputtering. \cite{Song_2014} NWs with 9 nm width exhibit transconductance (\(g_m = \frac{i_{output}}{V_{in}}\)) of high linearity. These results suggest that GaAs may be promising for high linearity low power RF applications. \cite{Song_2014} The GaAs GAA NW has also undergone some theoretical studies. Price and Martinez investigate the impact of electron-phonon scattering on the transfer characteristic of a GaAs GAA NW using quantum transport simulations. It was found that due to scattering and increase tunneling current a 72%, 77%, and 81% decrease in the on-current for a 6 nm, 10 nm, and 20 nm channel length respectively occured on a 2x2nm\(^{2}\) cross section transistor. \cite{Price_2015}

Miao and coworkers have grown planar GaAs NWs with Al shells and film barriers to produce transistors. \cite{Miao_2013} The transistors used NWs with widths of 35nm and channel lengths of 120 nm and performed on par with other similar devices. With an applied voltage of 1 V, a peak drive current of 0.38 (A/mm), peak extrinsic transconductance of 0.50 (S/mm) and average electron velocity of 2.6*10\(^7\) (cm/s) was found.

GaAs NW FET have also been demonstrated for detection of biological electrical activity, such as electrical activity produced by skeletal muscles and recorded as electromyogram (EMG).\cite{Imai_2014} The stochastic resonance, a phenomenon in which a system’s response to weak signals increases by the addition of noise, was taken advantage of along with a technique of parallel summing network in order to detect the EMG in a human forearm.\cite{Imai_2014}