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\section{Transistors}  GaAs NW hasthe desirable trait of  high charge carrier mobility. A mobility, a  desirable trait for devices such as microchips, which has historically been dominated by Si technology. Miao and coworkers have recently demonstrated done record breaking work by creating  GaAs NW arrays in planar (as opposed to typical vertical) form that outperfom the best Field effect transistor (FET) grown with NW, carbon nanotubes, graphene.\cite{Miao_2014} DC current and radio frequency performance