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\section{Transistors}  GaAs NW have high charge carrier mobility, a desirable trait for devices such as microchips, which has historically been dominated by Si technology. Miao and coworkers have recently done record breaking work by creating GaAs NW arrays in planar (as opposed to typical vertical) form for T-gated high electron mobility transistors (HEMTs).The planar form all  A 1.5x1.5 $cm^2$ chip with 115 planar HEMTS was fabricated via VLS templating and characterized in terms of its DC current-voltage characteristics and radio frequency (RF) performance. Testing founda  $\frac{f_t}{f_{max}}=\frac{33}{75}GHz$ and $\frac{I_{on}}{I^{off}}=10^4$. The GaAs NW chip greatly outperfroms other current NW, carbon nanotube, or graphene Field Effect Transistors (FET) (Figure \ref{fig:best}).