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\section{Transistors}  GaAs NW have high charge carrier mobility, a desirable trait for devices such as microchips, which has historically been dominated by Si technology. Miao and coworkers have recently done record breaking work by creating GaAs NW arrays in planar (as opposed to typical vertical) form for T-gated high electron mobility transistors (HEMTs). A 1.5x1.5 $cm^2$ chip with 115 planar HEMTS was fabricatedvia VLS templating  and characterized in terms of its DC current-voltage characteristics and radio frequency (RF) performance. Testing Grwoth methods included etching alignment markers on a GaAs substrate with iductively coupled plasma, depositing Au seeds (100nm diameter and300nm seperation distance) and VLS growth. Characterization testing  found $\frac{f_t}{f_{max}}=\frac{33}{75}GHz$ and $\frac{I_{on}}{I^{off}}=10^4$. The GaAs NW chip greatly outperfroms other current NW, carbon nanotube, or graphene Field Effect Transistors (FET) (Figure \ref{fig:best}).