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\section {PhotoVoltaics and Solar Energy Conversion }  Much research of GaAs NW for Solar cells have been conducted, as of late an investigation of axial junction construction instead of radial is being conducted. reported efficiencies have ranged from 0.71\% to 40\%.  Nakail and coworkers fabricated radial p-n junction GaAs NW via selective area metal organic chemical vapor deposition and only achieve a solar cell efficiency rate of 0.71\%.\cite{Nakai_2013} But  Mariani and coworkers fabricated radial p-n junctions GaAs NWvia NW via  selective area metal organic chemical vapor deposition. \cite{Mariani_2011} An deposition as well and could achieve an  energy conversion efficiency of 2.54\% was found. The 2.54. \cite{Mariani_2011} They  efficiency of the solar cell varied by type of transparent contact chosen on top of the nanowires. nanowires and that indium tin oxide was the best transparent electrode to use.  But Yao and coworkers explore the use of axial p-i-n junctions (as opposed to radial junctions )of GaAs NW for solar cells to increase their efficiency.\cite{Yao_2014} Axial junctions were found to be more tolerate of doped interfaces and larger diameter nanowires were more efficient. Peak efficiency was found to be 7.58\%, a definite improvement to the radial solar cells. These results are initial findings suggesting that GaAs NW are potentially good materials for solar cells. \cite{Yao_2014} Krogstrup and coworkers found single nanowire solar cells made of GaAs grown on a silicon substrate had an axial p-i-n junction that allowed an efficiency beyond the shockley-Queisser limit to as high as 40\%.\cite{Krogstrup_2013} the p-section is the doped substarate connected to the NW, and the n-section is the transparent material on top. The boost in absorption is thought to be due to the vertical configurationand resonance increase due to absorption cross section of the NW.\cite{Krogstrup_2013}